Defect density engineering for high-end masks (=0.14 technology phase-shift masks)

R Laubmeier; A MacKenzie; M Schmidt; R Sikorski; K Koremura; Takashi Ito

doi:10.1117/12.479344

16 August 2002 Defect density engineering for high-end masks (=0.14 technology phase-shift masks)

R Laubmeier, A MacKenzie, M Schmidt, R Sikorski, K Koremura, Takashi Ito

Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479344
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany

Abstract

The monitoring of defects on photomasks is becoming increasingly critical with ever decreasing feature sizes and higher mask-error-enhancement factors. This makes the characterization and a thorough understanding of the origin of different defect types essential in improving the first- pass defect level in a process. Two complementary approaches are presented, which are used to run an effective defect density engineering group, to aid in the production of high-end masks (equals 0.14 technology PSM). Firstly, an in-depth investigation of all defect- related reject masks is carried out. This includes SEM review, classification and storage of all defect - related information in a database. This allows the causes of defect- related rejection to be monitored. Secondly, a classical, in-line-monitoring concept is implemented. Here, an inspection and review is carried out on a regular basis, after each of the process steps involved in the production of high-end masks. For continuity and to ensure that all process steps are capable of handling the most challenging of masks, the most critical mask of any, given technology is used for all in-line monitoring. This gives a real, online status for every process and rapidly helps to identify potential problems very early.

Citation Download Citation

R Laubmeier, A MacKenzie, M Schmidt, R Sikorski, K Koremura, and Takashi Ito "Defect density engineering for high-end masks (=0.14 technology phase-shift masks)", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479344

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KEYWORDS

Inspection

Etching

Scanning electron microscopy

Photomasks

Laser applications

Particles

Dry etching

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