Paper
17 February 2003 InGaAsP digital optical wwitch on InP
Pedro Barrios, Philip J. Poole, Margaret Buchanan, Philip Chow-Chong, Ilya Golub, Charles Lacelle, Barry A. Syrett, Shawkat Abdalla, Shawky W. El-Mougy
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Proceedings Volume 4833, Applications of Photonic Technology 5; (2003) https://doi.org/10.1117/12.474049
Event: Applications of Photonic Technology 5, 2002, Quebec City, Canada
Abstract
We demonstrate Digital Optical Switches (DOS) on InP based on carrier-injection and on the quantum-confined Stark effect (QCSE). The active waveguide core is composed of either a double-heterostructure of InGaAsP for carrier-injection or a InGaAs-InGaAsP for reverse bias operation. O-Ion implantation was employed to isolate the branches of the DOS instead of the usual isolation by etching employed elsewhere.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pedro Barrios, Philip J. Poole, Margaret Buchanan, Philip Chow-Chong, Ilya Golub, Charles Lacelle, Barry A. Syrett, Shawkat Abdalla, and Shawky W. El-Mougy "InGaAsP digital optical wwitch on InP", Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); https://doi.org/10.1117/12.474049
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KEYWORDS
Semiconducting wafers

Waveguides

Resistance

Metals

Optical switching

Etching

Indium gallium arsenide

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