Paper
28 August 2003 Phase defect printability analysis for chromeless phase lithography technology
Sungmin Huh, JoHyung Park, Dong-Hoon Chung, Chang-Hwan Kim, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn
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Abstract
Chromeless Phase Lithography (CPL) is one of the promising RETs for low K1 optical lithography. However, there are remained issues in CPL mask manufacturing, such as phase defect, which can be generated during quartz dry etching process. In CPL mask technology, the traditional defect printability specification is no longer adequate. This paper investigates to understand the tolerance of the CPL in view of phase defect specification. We studied to find out specifications for phase defect in CPL mask. Three-dimensional topography is used in the phase defect simulation. Based on the simulation results, programmed defect mask is made to evaluate phase defect printability by measuring aerial images with AIMS. Also the inspection sensitivity for quartz phase defect was evaluated with current inspection tool.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungmin Huh, JoHyung Park, Dong-Hoon Chung, Chang-Hwan Kim, In-Kyun Shin, Sung-Woon Choi, and Jung-Min Sohn "Phase defect printability analysis for chromeless phase lithography technology", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504395
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KEYWORDS
Photomasks

Inspection

Quartz

Dry etching

Finite-difference time-domain method

Lithography

Defect inspection

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