Proximity effects for rinse, dry, and etch parameters

Sang-Kon Kim; Hye-Keun Oh; Ho Seob Kim

doi:10.1117/12.504192

28 August 2003 Proximity effects for rinse, dry, and etch parameters

Sang-Kon Kim, Hye-Keun Oh, Ho Seob Kim

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504192
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

As lithography pushes to the nanoline dimensions, even less drastic changes during photoresist processes can have a non-disregarding impact on proximity behavior, thus these changes can affect the optical proximity correction rules and models. In this study, after the descriptions of the modified mechanical method of rinse and dry processes and the model of etch simulation for dense and isolated lines, the impact on proximity behavior is described and analyzed by using the quantitative sensitivity of the pattern collapse and etch properties on the critical dimension. The effect for optical proximity correction rules and the characterization of the mask error enhancement factor are discussed.

Citation Download Citation

Sang-Kon Kim, Hye-Keun Oh, and Ho Seob Kim "Proximity effects for rinse, dry, and etch parameters", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504192

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