EUVL mask with Ru ML capping

Pei-Yang Yan; Guojing Zhang; Scott Chegwidden; Eberhard Adolf Spiller; Paul B. Mirkarimi

doi:10.1117/12.520024

17 December 2003 EUVL mask with Ru ML capping

Pei-Yang Yan, Guojing Zhang, Scott Chegwidden, Eberhard Adolf Spiller, Paul B. Mirkarimi

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.520024
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Silicon (Si) capping for extreme ultra-violet lithography (EUVL) multilayer (ML) mask blank presents certain disadvantages, such as prone to oxidation, low chemical resistance, low SiO₂ buffer layer etch selectivity to the capping layer. These performance and process issues with Si capped ML mask blank will reduce mask lifetime and require tighter process margin during EUVL mask processing. Using ruthenium (Ru) to replace Si for ML capping has been investigated previously for EUVL optics application. High oxidation resistance for Ru capped ML optics has been demonstrated. In this study, we have further demonstrated that Ru capped ML mask blank can also overcome the process issues that are associated with the Si capping. Our mask patterning results showed very high absorber and buffer etch selectivity to the Ru capping layer. As a result, uniform mask reflectivity after mask patterning is obtained. In this paper we will present detailed Ru capped ML mask fabrication results, such as etch profile, etch selectivity to the ML capping, as well as mask quality characterization results, which include ML performance data comparison before and after the mask patterning.

Citation Download Citation

Pei-Yang Yan, Guojing Zhang, Scott Chegwidden, Eberhard Adolf Spiller, and Paul B. Mirkarimi "EUVL mask with Ru ML capping", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.520024

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