Immersion system process optimization for 248-nm and 193-nm photomasks: binary and EAPSM

Gim Chen; Julio Reyes; James L Wood; Ismail Kashkoush; Laurent Dieu; Richard Novak

doi:10.1117/12.518247

17 December 2003 Immersion system process optimization for 248-nm and 193-nm photomasks: binary and EAPSM

Gim Chen, Julio Reyes, James L Wood, Ismail Kashkoush, Laurent Dieu, Richard Novak

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518247
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Spin spray and bath immersion systems are still the competing technologies for mask process. The preference for one or the other is largely dependent on factor such as performance, size, throughput, and cost. This paper focuses on the process optimization of the immersion bath technology in relation to the performance such as particulate soft defects, EAPSM optical parameter change, and antireflective layer reflectivity.

Citation Download Citation

Gim Chen, Julio Reyes, James L Wood, Ismail Kashkoush, Laurent Dieu, and Richard Novak "Immersion system process optimization for 248-nm and 193-nm photomasks: binary and EAPSM", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518247

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