Paper
14 May 2004 193-nm negative resist based on acid-catalyzed elimination of polar molecules
Ratnam Sooriyakumaran, Blake W. Davis, Carl E. Larson, Phillip J. Brock, Richard A. DiPietro, Thomas I. Wallow, Eric F. Connor, Linda K. Sundberg, Gregory Breyta, Robert D. Allen, Kaushal S. Patel, Pushkara Rao Varanasi
Author Affiliations +
Abstract
Development of 193-nm negative resists that meet the stringent performance requirements of sub-100 nm resolution with conventional 0.26 N TMAH developer has proven to be a significant challenge. Most of the systems that are currently under development are based on cross-linking mechanisms. They commonly suffer from image distortion caused by micro-bridging. An alternative approach is to look at polarity switch mechanisms. We have investigated the acid-catalyzed elimination of polar molecules as one such mechanism which may provide a pathway to develop negative resists that do not suffer from micro-bridging.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnam Sooriyakumaran, Blake W. Davis, Carl E. Larson, Phillip J. Brock, Richard A. DiPietro, Thomas I. Wallow, Eric F. Connor, Linda K. Sundberg, Gregory Breyta, Robert D. Allen, Kaushal S. Patel, and Pushkara Rao Varanasi "193-nm negative resist based on acid-catalyzed elimination of polar molecules", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.536432
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Polymers

Molecules

Switches

Standards development

Distortion

Lithography

Photomasks

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