Proceedings Article | 12 May 2003
KEYWORDS: Monte Carlo methods, Field effect transistors, Scattering, Resistance, Transistors, Phonons, Reliability, Ionization, Oxides, Computer simulations
Due to the enormous industrial interest of the SOI MOSFET technology, a proper understanding of the physics underlying the behavior of these devices is necessary in order to optimize their high frequency performance. In this work, we study the static, dynamic and noise characteristics of FDSOI MOSFET’s by means of numerical simulations validated by comparison with experimental data. For this purpose, we use a 2D Ensemble Monte Carlo simulator, taking into account, in an appropriate manner, the physical topology of a fabricated 0.25 μm gate-length FDSOI transistor. Important effects appearing in real transistors, such as surface charges, contact resistances, impact ionization phenomena and extrinsic parasitics are included in the simulation. This allows to accurately reproduce the experimental behavior of static and dynamic parameters (output and transference characteristics, gm/ID ratio, capacitances, etc.). Moreover, results are explained by means of internal quantities such as concentration, velocity or energy of carriers. The results of the Monte Carlo simulations for the typical four noise parameters (NFmin, Gass, Rn, \Gamma opt) of the 0.25 μm FDSOI MOSFET also show an exceptional agreement with experimental data. Once the reliability of the simulator has been confirmed, a full study of the noise characteristics of the device (noise sources, drain spectral densities, α, β and C parameters, etc.) is performed. Taking advantage of the possibilities of the Monte Carlo method as a pseudo-experimental approach, the influence on these noise characteristics of the variation of some geometry parameters (i.e., downscaling the gate length, thickness of the active layer or inclusion of HALO regions) is evaluated an interpreted in terms of microscopic transport processes.
