Thermal de-embedding procedure for cryogenic on wafer high frequency noise measurement

Sébastien Delcourt; Gilles Dambrine; Nourr Eddine Bourzgui; Francois Danneville; Christophe Laporte; Jean-Philippe Fraysse; Michel Maignan

doi:10.1117/12.545997

25 May 2004 Thermal de-embedding procedure for cryogenic on-wafer high-frequency noise measurement

Sébastien Delcourt, Gilles Dambrine, Nourr Eddine Bourzgui, Francois Danneville, Christophe Laporte, Jean-Philippe Fraysse, Michel Maignan

Author Affiliations +

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.545997
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The main objectives of this work concerns the on-wafer high frequency noise measurements of low noise transistors (GaAs and InP HEMTs) at cryogenic temperature. We propose a new approach to de-embed the measured noise figure or noise power by taking into account the temperature distribution of the whole bench. For measurements at 77K, the gradient of temperature between the DUT and the receiver or the noise source is greater than 200K and the temperature distribution along the probes and cables is non uniform. This temperature distribution has to be accurately known to de-embed the measured noise figure and especially for low noise device like lattice-matched or metamorphic HEMTs. The temperature distribution along the probes and cables is obtained using a 3-D thermal modeling (ANSYS) and has been checked through thermal sensors measurements. The inputs of the thermal simulations are the material composition and associated thermal properties of the probes, connectors and cables. This temperature distribution associated to a RLCG transmission line are afterwards implemented in CAD tool (ADS). In order to check the validity of such model, we have measured the noise power of a 50 Ω resistance for different temperatures (77 K to 295 K). At 77 K, after a de-embedding procedure using the distributed temperature model, we obtain an equivalent noise temperature of the resistance of 77 K ± 10 K. This de-embedding method will be applied to extract the noise parameters of cooled down HEMTs.

Citation Download Citation

Sébastien Delcourt, Gilles Dambrine, Nourr Eddine Bourzgui, Francois Danneville, Christophe Laporte, Jean-Philippe Fraysse, and Michel Maignan "Thermal de-embedding procedure for cryogenic on-wafer high-frequency noise measurement", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.545997

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