Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures

Yuqiang Tu; Glenn H. Chapman; James Dykes; David Poon; Chinheng Choo; Jun Peng

doi:10.1117/12.569405

6 December 2004 Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures

Yuqiang Tu, Glenn H. Chapman, James Dykes, David Poon, Chinheng Choo, Jun Peng

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569405
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

Bimetallic thin films were previously shown to create laser direct write binary and analog gray scale photomasks. DC-sputtered Sn/In (5at.% Sn, 80 nm) oxidize under laser exposure, modifying the optical density at 365 nm from >3OD to <0.22OD. Bimetallic Sn/In thin film grayscale photomasks have been successfully used to create concave and convex 3D structures using mask aligners with Shipley photoresists. To produce precise 3D structures in the organic photoresists, every mask making step was studied. Compensations during the mask making process were necessary because that the relationship between the optical density of the exposed bimetallic films and the laser writing power is not accurately linear, and also that the response of the photoresists is not linear to the exposure. V-grooves with straight slope profile were produced with calibrations taken into account. X-ray diffraction analysis indicates that structure of laser exposed Sn/In bimetallic films is similar to that of ITO films, suggesting new directions for improvement of bimetallic film optical properties, and that the theoretical maximum transmission should approach pure ITO’s ~0.05OD in the visible wavelength.

Citation Download Citation

Yuqiang Tu, Glenn H. Chapman, James Dykes, David Poon, Chinheng Choo, and Jun Peng "Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569405

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