Paper
21 October 2004 Multiple-pass Z-Scan for the characterization of partial transparent nonlinear optical materials
Tatiana Bazaru, Ioan Dancus, Petronela S. Doia, Adrian Petris, Valentin Ionel Vlad
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Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.583043
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania
Abstract
The results obtained using Z-Scan methods (transmission -- TZ-Scan and multiple-pass -- MZ-Scan) for the characterization of the partial transparent nonlinear optical materials (NOM) are presented. For a typical NOM, a monocrystalline Si wafer with thickness 0.4 mm, at λ = 1060 nm, the nonlinear bulk effects are dominant in comparison with the nonlinear effects produced by the entrance interface (due to the sufficient large transmission of Si). In this case, the MZ-Scan at low laser intensity (several MW/cm2) can be analyzed similarly to the TZ-Scan, considering the multiple passes inside the sample and linear Fresnel reflections on both sample faces. Due to these multiple passes inside the sample, the sensitivity of the method is increased. The nonlinear optical susceptibility experimentally determined by multiple-pass Z-Scan is in agreement with a theoretical estimation of this parameter, with the results of other treatments of MZ-Scan and TZ-Scan and with its values obtained by two and four-wave mixing.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatiana Bazaru, Ioan Dancus, Petronela S. Doia, Adrian Petris, and Valentin Ionel Vlad "Multiple-pass Z-Scan for the characterization of partial transparent nonlinear optical materials", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); https://doi.org/10.1117/12.583043
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KEYWORDS
Refractive index

Silicon

Nonlinear optics

Semiconducting wafers

Nonlinear optical materials

Interfaces

Nano opto mechanical systems

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