Float zone silicon for infrared and microwave applications

Thomas Clausen

doi:10.1117/12.578238

16 December 2004 Float zone silicon for infrared and microwave applications

Thomas Clausen

Proceedings Volume 5621, Optical Materials in Defence Systems Technology; (2004) https://doi.org/10.1117/12.578238
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom

Abstract

High Resistivity (HiRes(TM)) silicon (Resistivity ≥ 8000 Ohm-cm) is demonstrated as the best choice of microwave substrate for emerging radio frequency (RF) MEMS devices operating at GHz/THz frequencies. The potential combination of active devices with passive MEMS structures allows single-chip realization of complete and cost effective microwave and millimeter wave systems. High Transparency (HiTran) silicon is demonstrated as the best choice of infrared material for systems working in the 3-5 micron region and for some type of systems working in the 8-12 micron region provided than thickness of the HiTran material does not exceed 2 mm.

Citation Download Citation

Thomas Clausen "Float zone silicon for infrared and microwave applications", Proc. SPIE 5621, Optical Materials in Defence Systems Technology, (16 December 2004); https://doi.org/10.1117/12.578238

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