Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries

Xudi Wang; Xiangdong Xu; Ying Liu; Yiling Hong; Shaojun Fu

doi:10.1117/12.573666

7 February 2005 Reactive ion beam etching of HfO₂ film using Ar/CHF₃ gas chemistries

Xudi Wang, Xiangdong Xu, Ying Liu, Yiling Hong, Shaojun Fu

Proceedings Volume 5636, Holography, Diffractive Optics, and Applications II; (2005) https://doi.org/10.1117/12.573666
Event: Photonics Asia, 2004, Beijing, China

Abstract

A number of current and future optical and optoelectronic devices require the creation of structure in HfO₂ film. The reactive ion beam etching of HfO₂ film and photoresist mask in Ar/CHF₃ gas mixture was examined as a function of ion energy, discharge composition and ion beam incident angle. The details of etch rate have been interpreted in terms of mechanism of etching. The etch rate has shown a square root dependence on ion energy and variation versus incidence angle. The CHF₃- plasma produced some chemical enhancement in HfO₂ film etching. Compared with pure argon etching, better selectivity and higher fidelity pattern transfer were achieved with Ar/CHF₃ for HfO₂ film over photoresisit mask. The AFM scans of etched HfO₂ film by tapping mode showed good surface quality.

Citation Download Citation

Xudi Wang, Xiangdong Xu, Ying Liu, Yiling Hong, and Shaojun Fu "Reactive ion beam etching of HfO₂ film using Ar/CHF₃ gas chemistries", Proc. SPIE 5636, Holography, Diffractive Optics, and Applications II, (7 February 2005); https://doi.org/10.1117/12.573666

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