A high-g overload-protected accelerometer with a novel microstructure

Weiping Chen; Wei Wang; Lei Tian; Xiaowei Liu; Mingxue Huo; Ruichao Zhang; Deyin Zhang

doi:10.1117/12.581191

30 December 2004 A high-g overload-protected accelerometer with a novel microstructure

Weiping Chen, Wei Wang, Lei Tian, Xiaowei Liu, Mingxue Huo, Ruichao Zhang, Deyin Zhang

Proceedings Volume 5641, MEMS/MOEMS Technologies and Applications II; (2004) https://doi.org/10.1117/12.581191
Event: Photonics Asia, 2004, Beijing, China

Abstract

A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.

Citation Download Citation

Weiping Chen, Wei Wang, Lei Tian, Xiaowei Liu, Mingxue Huo, Ruichao Zhang, and Deyin Zhang "A high-g overload-protected accelerometer with a novel microstructure", Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); https://doi.org/10.1117/12.581191

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