Backside sample preparation with laser-enhanced chemical etching for infrared photon imaging

Qin Deng; Zhihong Mai; Ran He; Tawei Tao; Jeffrey Lam; Yongfeng Lu

doi:10.1117/12.596665

12 April 2005 Backside sample preparation with laser-enhanced chemical etching for infrared photon imaging

Qin Deng, Zhihong Mai, Ran He, Tawei Tao, Jeffrey Lam, Yongfeng Lu

Proceedings Volume 5713, Photon Processing in Microelectronics and Photonics IV; (2005) https://doi.org/10.1117/12.596665
Event: Lasers and Applications in Science and Engineering, 2005, San Jose, California, United States

Abstract

Backside sample preparation has been widely used in failure analysis of integrated circuits (IC). Conventional backside sample preparation methodologies include mechanical grinding, parallel polishing, chemical etching with mask, etc. The mechanical grinding or polishing could induce mechanical damage in the Si. Normally the thickness after sample preparation with mechanical methods is about 100 um and above. Chemical etching can be applied to get thinner sample, e.g., less than 30 um and below. For a sample with thickness less than 30 um, mechanical support is needed. In order to make selective etching on substrates, a patterned mask has to be applied on the sample. In this paper, we will present a new methodology for backside sample preparation, which uses laser-enhanced chemical etching to open a trench on Si from the backside. This methodology can get thinner backside sample with strong mechanical support from the substrate.

Citation Download Citation

Qin Deng, Zhihong Mai, Ran He, Tawei Tao, Jeffrey Lam, and Yongfeng Lu "Backside sample preparation with laser-enhanced chemical etching for infrared photon imaging", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); https://doi.org/10.1117/12.596665

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