Resist blur and line edge roughness

Gregg M. Gallatin

doi:10.1117/12.607233

12 May 2005 Resist blur and line edge roughness (Invited Paper)

Gregg M. Gallatin

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.607233
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

A straightforward analytic model of resist line edge roughness is presented which predicts all the known scaling laws as well as the shape of the experimentally seen frequency content or power spectrum of the roughness. The model implies there are strong basic limitations to achieving, simultaneously, low roughness, low dose and high resolution in any standard chemically amplified resist process. A simple model of how roughness maps to device performance is also presented.

Citation Download Citation

Gregg M. Gallatin "Resist blur and line edge roughness (Invited Paper)", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.607233

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available