Paper
8 December 2004 Heat-treating effect on the properties of Pb1-xLax(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process
Fuwen Shi, Genshui Wang, Xiangjian Meng, Jinglan Sun, Jun-Hao Chu
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607555
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
2 mol% Lanthanum doped lead zirconate titanate Pb(Zr0.4Ti 0.6)O3 ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO2/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm2, a spontaneous polarization of 75.7μ C/cm2, and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fuwen Shi, Genshui Wang, Xiangjian Meng, Jinglan Sun, and Jun-Hao Chu "Heat-treating effect on the properties of Pb1-xLax(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607555
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KEYWORDS
Thin films

Annealing

Lanthanum

Lead

Sol-gels

Dielectric polarization

Ferroelectric materials

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