Amorphous GexSi1-x and GexSi1-xOy thin films for uncooled microbolometers

Mukti M. Rana; Donald P. Butler

doi:10.1117/12.603839

31 May 2005 Amorphous Ge_xSi_1-x and Ge_xSi_1-xO_y thin films for uncooled microbolometers

Mukti M. Rana, Donald P. Butler

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.603839
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

RF sputtered thin films of Si_1-xGe_x and Si_1-xGe_xO_y were investigated by measuring their composition, electrical, and optical properties. As Si concentration was increased to the Ge to form Si_1-xGe_x films, the resistivity was increased while the activation energy and TCR both were decreased. For Si_1-xGe_xO_y films, the addition of O₂ to the Si_1-xGe_x, increased the resistivity, activation energy and TCR. The TCR was measured to vary from -2.27%/K to -8.69%/K, while the resistivity varied from 4.22×10² Ω-cm to 3.47×10⁹ Ω-cm. A good atomic composition of Si1-xGexOy to be used in microbolometers as the sensitive layer was found to have a TCR of -5.10%/K with a moderate resistivity of ~10⁴ Ω-cm. Microbolometers using doped Si_0.15Ge_0.85 and Si_0.15Ge_0.85O_y thermometers have been fabricated using a polyimide sacrificial layer. The 1/f-noise is observed to be relatively high in the Si_1-xGe_x thin films and microbolometers.

Citation Download Citation

Mukti M. Rana and Donald P. Butler "Amorphous Ge_xSi_1-x and Ge_xSi_1-xO_y thin films for uncooled microbolometers", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.603839

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