Growth and properties of silicon heterostructures with buried nanosize Mg2Si clusters

N. G. Galkin; K. N. Galkin

doi:10.1117/12.634543

8 June 2005 Growth and properties of silicon heterostructures with buried nanosize Mg₂Si clusters

N. G. Galkin, K. N. Galkin

Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634543
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation

Abstract

The technology of solid-phase growth of nanosize islands of magnesium suicide on Si (111) 7x7 with narrow distributions of lateral size and height (60 - 80 and 5 - 7 nanometers, respectively) and density of up to 2x 10⁹ sm^-2 is proposed. A 20-50 nm thick Si layer has been grown upon these islands. Basing on the data of AES, EELS, AFM and JR spectroscopy, a conclusion is made that the Mg₂Si islands remain in depth of the Si layer. The suggestion is made that sizes, density and crystal structure of the buried magnesium suicide clusters preserves. It is shown, that the system of three as-grown layers of buried clusters has smoother surface than the one layer system. The contribution of the Mg₂Si clusters into the dielectric function is observed at the energy 0.8-1.2 eV, it is maximal if the clusters are localized on the silicon surface. It is shown, that with increase of the number of Mg₂Si cluster layers their contribution increases into the effective number of electrons per a unit cell and effective dielectric function of the sample.

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N. G. Galkin and K. N. Galkin "Growth and properties of silicon heterostructures with buried nanosize Mg₂Si clusters", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634543

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