Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

Jaeheon Han; Seungjin Yoo

doi:10.1117/12.634541

8 June 2005 Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

Jaeheon Han, Seungjin Yoo

Author Affiliations +

Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634541
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation

Abstract

Ultrashort channel GaAs metal semiconductor field effect transistors were fabricated with gate lengths ranging from 30 nm to 1 05 nm, by electron beam lithography, in order to examine the scaling characteristics of transconductance. For gate lengths in sub-100 nanometer range, where gradual channel approximation is no longer valid, it was observed that the transconductance varies with a variety of small-dimension-related, nonequilibrium electron dynamics phenomena such as gate fringing effect, electron velocity overshoot, and short channel tunneling. Short channel tunneling was suggested experimentally for the first time to explain the degradation of transistor performance, overriding an enhancement due to electron velocity overshoot for a gate length smaller than the average inelastic mean free path of an electron.

Citation Download Citation

Jaeheon Han and Seungjin Yoo "Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634541

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