Paper
16 May 2006 OASIS: cryogenically-optimized resistive arrays and IRSP subsystems for space-background IR simulation
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Abstract
SBIR has completed design and development of prototype emitter arrays and is completing custom cryogenic vacuum device packaging and support electronics for the Optimized Arrays for Space-background Infrared Simulation (OASIS) program. The OASIS array is a 512 x 512 device featuring high output dynamic range, a selectable analog/digital scene data interface, and the capability to operate from cryogenic to ambient substrate temperatures - thereby providing an enabling technology for projection of simulated radiance of space-background scenes. Prototype emitter production has been completed at RTI International in support of initial deliveries. The OASIS array package incorporates novel electrical bussing schemes optimized for the OASIS RIIC and a modular architecture to allow user re-configuration of both window and emitter shield. The OASIS package leverages LFRA operation features, and supports both ambient and cryogenic chamber-based operation with a minimum of mechanical and electrical re-configuration. The OASIS close support electronics (CSE) supports both analog and digital input data modes, while providing easy electronic connection between arrays installed in the cryogenic chamber and the external control and scene-generation systems. We present a technical overview of the OASIS array/package and CSE designs, and will report on measured radiometric performance from prototype OASIS arrays.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay James, Paul Bryant, Steve Solomon, Joe LaVeigne, Greg Matis, Jim Oleson, John Lannon, Scott Goodwin, and Alan Huffman "OASIS: cryogenically-optimized resistive arrays and IRSP subsystems for space-background IR simulation", Proc. SPIE 6208, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XI, 620812 (16 May 2006); https://doi.org/10.1117/12.669302
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KEYWORDS
Cryogenics

Electronics

Interfaces

Resistance

Control systems

Semiconducting wafers

Tungsten

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