Paper
9 June 2006 Optical bistable switching in Fabry-Perot interferometer with bulk heavily doped GaAs active layer
George V. Sinitsyn, Ilya A. Utkin
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Abstract
Dynamic behavior of the nonlinear Fabry-Perot interferometer with heavily doped n-GaAs internal layer under 20 ns laser pulses excitation has been studied. Optical bistability with less than 10 ns switch-OFF time has been demonstrated.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George V. Sinitsyn and Ilya A. Utkin "Optical bistable switching in Fabry-Perot interferometer with bulk heavily doped GaAs active layer", Proc. SPIE 6258, ICONO 2005: Novel Photonics Materials: Physics and Optical Diagnostics of Nanostructures, 625802 (9 June 2006); https://doi.org/10.1117/12.676813
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KEYWORDS
Fabry–Perot interferometers

Gallium arsenide

Fabry–Perot interferometry

Switching

Bistability

Nonlinear optics

Semiconductors

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