Forming matrix nanostructures in silicon

A. V. Barkhudarov; S. A. Gavrilov; A. A. Golishnikov; M. G. Putrya

doi:10.1117/12.683293

10 June 2006 Forming matrix nanostructures in silicon

A. V. Barkhudarov, S. A. Gavrilov, A. A. Golishnikov, M. G. Putrya

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600Z (2006) https://doi.org/10.1117/12.683293
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The technology of fabrication of the self-organizing ranked mask on base porous aluminum for etching nanosize pores in silicon has been considered. The experiments on obtaining the nanosize matrix structures in silicon have been conducted.

Citation Download Citation

A. V. Barkhudarov, S. A. Gavrilov, A. A. Golishnikov, and M. G. Putrya "Forming matrix nanostructures in silicon", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600Z (10 June 2006); https://doi.org/10.1117/12.683293

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