Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin; Boris A. Borisov; Gregory A Garrett; Wendy L. Sarney; Anand V. Sampath; Hongen Shen; Michael Wraback; Mark Holtz

doi:10.1117/12.701394

8 February 2007 Enhanced luminescence from Al_xGa_1-xN/Al_yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Boris A. Borisov, Gregory A Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, Mark Holtz

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647306 (2007) https://doi.org/10.1117/12.701394
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report the structural and optical properties of Al_xGa_1-xN/Al_yGa_1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of Al_yGa_1-yN, 0.3xGa_1-xN, 0.55

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Sergey A. Nikishin, Boris A. Borisov, Gregory A Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, and Mark Holtz "Enhanced luminescence from Al_xGa_1-xN/Al_yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647306 (8 February 2007); https://doi.org/10.1117/12.701394

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