Paper
13 March 2007 Laser heterodyne photothermal nondestructive method: extension to transparent probe
V. Pencheva, S. Penchev, V. Naboko, K. Toyoda, T. Donchev
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Proceedings Volume 6604, 14th International School on Quantum Electronics: Laser Physics and Applications; 660416 (2007) https://doi.org/10.1117/12.727100
Event: 14th International School on Quantum Electronics: Laser Physics and Applications, 2006, Sunny Beach, Bulgaria
Abstract
We present a contribution to the development of the laser heterodyne method of nondestructive material analysis employing photothermal displacement (PTD) probe. PTD is a dominant factor of the photothermal effect in metals and semiconductors, where the derived linear dependence on absorbed energy exhibits a fingerprint of their physical properties. Theoretical consideration of the case of transparent probe is accomplished extending thermal diffusion model. Laser double heterodyne detection is verified for opaque and transparent probes, and in the exclusive case of silicon. The achieved resolution of photothermal displacement is less than 10-12 m well above the limits of heterodyne measurement.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Pencheva, S. Penchev, V. Naboko, K. Toyoda, and T. Donchev "Laser heterodyne photothermal nondestructive method: extension to transparent probe", Proc. SPIE 6604, 14th International School on Quantum Electronics: Laser Physics and Applications, 660416 (13 March 2007); https://doi.org/10.1117/12.727100
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KEYWORDS
Heterodyning

Silicon

Modulation

Semiconductor lasers

Diffusion

Absorption

Nondestructive evaluation

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