Paper
15 May 2007 Thermal analysis of EUV mask under inspection laser beam irradiation
Author Affiliations +
Abstract
Temperature of EUV mask surface under inspection laser beam irradiation is modeled and simulated. Various conditions including beam power, beam size, irradiation time, and wavelength are considered. Calculation program for this study has two components: at first, average power passing through the film is calculated from optical properties of materials, and then heat transfer equations are solved using finite difference method. Temperature of multilayer below the absorber depends on the optical properties of absorber film surface. At the wavelength of deep ultraviolet region, temperature of multilayer below the absorber rises higher than in the temperature of multilayer directly exposed to the beam.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasushi Nishiyama, Tsuyoshi Amano, Hiroyuki Shigemura, Tsuneo Terasawa, and Osamu Suga "Thermal analysis of EUV mask under inspection laser beam irradiation", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073B (15 May 2007); https://doi.org/10.1117/12.729030
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KEYWORDS
Silicon

Inspection

Multilayers

Molybdenum

Extreme ultraviolet

Reflectivity

Tantalum

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