Paper
26 April 2007 About mechanisms of anomalous photovoltage effect in CdTe films
G. A. Nabiev
Author Affiliations +
Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360W (2007) https://doi.org/10.1117/12.742553
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. A. Nabiev "About mechanisms of anomalous photovoltage effect in CdTe films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360W (26 April 2007); https://doi.org/10.1117/12.742553
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Cadmium

Camera shutters

Silicon films

Annealing

Glasses

Mercury

Metals

RELATED CONTENT

MOCVD of CMT
Proceedings of SPIE (July 09 1986)
Schottky barriers at Au/p-CdTe interfaces
Proceedings of SPIE (January 20 2004)

Back to Top