650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW

B. Sumpf; P. Adamiec; M. Zorn; P. Froese; J. Fricke; P. Ressel; H. Wenzel; M. Weyers; G. Erbert; G. Tränkle

doi:10.1117/12.761575

13 February 2008 650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW

B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M. Weyers, G. Erbert, G. Tränkle

Author Affiliations +

Proceedings Volume 6876, High-Power Diode Laser Technology and Applications VI; 68760M (2008) https://doi.org/10.1117/12.761575
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

High-brightness 650 nm tapered lasers with output powers up to 1 W and nearly diffraction limited beam quality at 500 mW were realized. The vertical structure is based on an InGaP single quantum well (SQW) embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The tapered structure consists of a 750 μm long ridge waveguide section and a 1.25 mm long flared section. Taper angles of 2°, 3° and 4° were manufactured. At 15°C, the devices achieve 1 W at an operating current below 2 A in CW operation. The conversion efficiency is about 20%. At 500 mW output power a nearly diffraction limited beam quality with a beam propagation ratio of about 1.5 was measured. The reliability was studied in a long-term test for five tapered diodes at 250 mW over 1,000 h and than at 500 mW over 2,000 h. All diodes survived this test. The beam quality remains nearly stable over the complete reliability test.

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B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M. Weyers, G. Erbert, and G. Tränkle "650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760M (13 February 2008); https://doi.org/10.1117/12.761575

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