Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Y. Kawai; S. Ohsuka; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1117/12.784113

22 February 2008 Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 688904 (2008) https://doi.org/10.1117/12.784113
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

InGaN epitaxial film growth has been performed on (0001) c-, (1120) a- and ₍₁₁₀₀₎ (see manuscript for full text) m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550°C - 680°C. The grown layers were confirmed to be single crystalline by X-ray diffraction.

Citation Download Citation

Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki "Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688904 (22 February 2008); https://doi.org/10.1117/12.784113

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