Increasing the efficiency of p+np+ injection-avalanche Si CMOS LEDs (450nm – 750nm) by means of depletion layer profiling and reach-through techniques

Lukas W. Snyman; Monuko du Plessis

doi:10.1117/12.760038

26 February 2008 Increasing the efficiency of p⁺np⁺ injection-avalanche Si CMOS LEDs (450nm - 750nm) by means of depletion layer profiling and reach-through techniques

Lukas W. Snyman, Monuko du Plessis

Author Affiliations +

Proceedings Volume 6898, Silicon Photonics III; 68980E (2008) https://doi.org/10.1117/12.760038
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Modeling of p⁺np⁺ CMOS Si LED structures show that by utilizing a short linear increasing E-field in the p⁺n reverse biased junction with a gradient of approximately 5 × 10⁵ V.cm^-1. μm^-1, and facing an injecting p⁺n junction, has the potential to enhance photonic emissions in the 2.2 and 2.8 eV (450-750nm ) regime. Latest new designs utilize reach-through techniques in p⁺np⁺ avalanche-injection control structures and p⁺np⁺ poly-Si gated structures and show positive realizations of this model. Areas in the devices show marked increases in emission efficiency of factors of up to 50 - 100 as compared to previous realizations utilizing no reach-through and injection techniques. The current devices operated in the 6-8V, 1uA - 2mA regime and emit at levels of up to ~10nW /μm². The developed devices have been realized using standard 0.35 μm CMOS design rules and fabrication technology, and have particular technological significance for future all-silicon CMOS opto-elctronic circuits and systems. The current emission levels are about three orders higher than the low frequency detectability limit of CMOS p-i-n detectors of corresponding area.

Citation Download Citation

Lukas W. Snyman and Monuko du Plessis "Increasing the efficiency of p⁺np⁺ injection-avalanche Si CMOS LEDs (450nm - 750nm) by means of depletion layer profiling and reach-through techniques", Proc. SPIE 6898, Silicon Photonics III, 68980E (26 February 2008); https://doi.org/10.1117/12.760038

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