Paper
13 February 2009 Three-dimensional InAs/GaAs quantum-dot islands size and density study using kinetic Monte Carlo simulation
M. Sun, E. Pan, P. W. Chung
Author Affiliations +
Abstract
Three-dimensional (3D) InAs/GaAs quantum dots (QDs) island size and density evolution under different coverage and temperature is studied by using our 3D kinetic Monte Carlo (KMC) model. Our KMC model is based on the solid-on-solid one with bond counting and Ehrlich-Schwoebel barrier being incorporated. It is found that there is a QD island size limit for the growth coverage. Below this limit existing QD islands can adsorb new-coming adatoms; however, beyond the limit new QD islands will form and adopt new coming adatoms. It is also observed that with increasing temperature, the QD islands size will be increased while their density will be reduced.
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M. Sun, E. Pan, and P. W. Chung "Three-dimensional InAs/GaAs quantum-dot islands size and density study using kinetic Monte Carlo simulation", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 722406 (13 February 2009); https://doi.org/10.1117/12.813027
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KEYWORDS
3D modeling

Chemical species

Monte Carlo methods

Indium arsenide

Quantum dots

Computer simulations

Einsteinium

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