The analysis of polarization characteristics on 40nm memory devices

Minae Yoo; Chanha Park; Taejun You; Hyunjo Yang; Young-Hong Min; Ki-Yeop Park; Donggyu Yim; Sungki Park

doi:10.1117/12.814087

16 March 2009 The analysis of polarization characteristics on 40nm memory devices

Minae Yoo, Chanha Park, Taejun You, Hyunjo Yang, Young-Hong Min, Ki-Yeop Park, Donggyu Yim, Sungki Park

Proceedings Volume 7274, Optical Microlithography XXII; 72742W (2009) https://doi.org/10.1117/12.814087
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Hyper NA system has been introduced to develop sub-60nm node memory devices. Especially memory industries including DRAM and NAND Flash business have driven much finer technology to improve productivity. Polarization at hyper NA has been well known as important optical technology to enhance imaging performance and also achieve very low k1 process. The source polarization on dense structure has been used as one of the major RET techniques. The process capabilities of various layers under specific illumination and polarization have been explored. In this study, polarization characteristic on 40nm memory device will be analyzed. Especially, TE (Transverse Electric) polarization and linear X-Y polarization on hyper NA ArF system will be compared and investigated. First, IPS (Intensity in Preferred State) value will be measured with PMM (Polarization Metrology Module) to confirm polarization characteristic of each machine before simulation. Next simulation will be done to estimate the CD variation impact of each polarization to different illumination. Third, various line and space pattern of DRAM and Flash device will be analyzed under different polarized condition to see the effect of polarization on CD of actual wafer. Finally, conclusion will be made for this experiment and future work will be discussed. In this paper, the behavior of 40nm node memory devices with two types of polarization is presented and the guidelines for polarization control is discussed based on the patterning performances.

Citation Download Citation

Minae Yoo, Chanha Park, Taejun You, Hyunjo Yang, Young-Hong Min, Ki-Yeop Park, Donggyu Yim, and Sungki Park "The analysis of polarization characteristics on 40nm memory devices", Proc. SPIE 7274, Optical Microlithography XXII, 72742W (16 March 2009); https://doi.org/10.1117/12.814087

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KEYWORDS

Polarization

Critical dimension metrology

Semiconducting wafers

Lithography

Optical lithography

Fiber optic illuminators

Polarization control

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