Paper
23 September 2009 Calibration of e-beam and etch models using SEM images
Constantin Chuyeshov, Jesus Carrero, Apo Sezginer, Vishnu Kamat
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Abstract
Mask Process Compensation (MPC) corrects proximity effects arising from e-beam lithography and plasma etch processes that are used in the photomask manufacturing. Accurate compensation of the mask process requires accurate, predictive models of the manufacturing processes. Accuracy of the model in turn requires accurate calibration of the model. We present a calibration method that uses either SEM images of 2-dimensional patterns, or a combination of SEM images and 1D CD-SEM measurements. We describe how SEM images are processed to extract the contours, and how metrology and process variability and SEM alignment errors are handled. Extracted develop inspection (DI) and final inspection (FI) contours are used to calibrate e-beam and etch models. Advantages of the integrated 2D+1D model calibration are discussed in the context of contact and metal layers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Constantin Chuyeshov, Jesus Carrero, Apo Sezginer, and Vishnu Kamat "Calibration of e-beam and etch models using SEM images", Proc. SPIE 7488, Photomask Technology 2009, 74883I (23 September 2009); https://doi.org/10.1117/12.833485
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Cited by 4 scholarly publications.
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KEYWORDS
Scanning electron microscopy

Calibration

Etching

Photomasks

Data modeling

Metrology

Image processing

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