Study Of Conduction Band Tail States In A-Si,Ge:H,F Alloys By Electron Time-Of-Flight

D. S. Shen; S. Aljishi; J. P. Conde; Z. E. Smith; V. Chu; S. Wagner

doi:10.1117/12.940154

21 August 1987 Study Of Conduction Band Tail States In A-Si,Ge:H,F Alloys By Electron Time-Of-Flight

D. S. Shen, S. Aljishi, J. P. Conde, Z. E. Smith, V. Chu, S. Wagner

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940154
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

The electron time-of-flight characteristics of un-alloyed a-Si:H and of a-Si,Ge:H,F alloys were studied. The log I -log t characteristics of the alloys are highly dispersive and include anomalous features. The characteristics depend strongly on measurement temperature, becoming more regular as the temperature increases. Substantial differences between low-gap alloys with comparable optical gaps are observed. Computer simulation suggests that an extra density of deep tail states, or the midgap states, are responsible for the anomalous characteristics.

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D. S. Shen, S. Aljishi, J. P. Conde, Z. E. Smith, V. Chu, and S. Wagner "Study Of Conduction Band Tail States In A-Si,Ge:H,F Alloys By Electron Time-Of-Flight", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940154

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