Improving CD uniformity for thermal cured systems in double patterning

Lori Joesten; Ken Spizuoco; Yi Liu; Young Bae

doi:10.1117/12.846602

30 March 2010 Improving CD uniformity for thermal cured systems in double patterning

Lori Joesten, Ken Spizuoco, Yi Liu, Young Bae

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391X (2010) https://doi.org/10.1117/12.846602
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The implementation of double patterning processes in 193 immersion lithography is moving forward. The industry is examining several methods of producing robust double pattern images. These methods include thermal cure resists and the use of a spin on chemical to cure the layer 1 resist image. Thermal cure resist systems require fewer processing steps than a chemical curing process. An effective thermal cure process improves process throughput, reduces chemical costs and reduces process complexity In either case, producing wafers with adequate CD Uniformity (CDU) relies on the ability of the layer 1 resist to remain inert during subsequent processing steps. The goal of this paper is to isolate and optimize the critical processing steps using thermal cured resists in order to improve CDU. The system includes a layer 1 thermal cured resist and a traditional layer 2 resist. Processing was done using a TEL Lithius I+ and an ASML XT Twinscan 1900i. The feature of interest is a 42 nm x-Hatch contact hole produced by horizontal lines exposed with layer 1 and vertical lines exposed with layer 2.

Citation Download Citation

Lori Joesten, Ken Spizuoco, Yi Liu, and Young Bae "Improving CD uniformity for thermal cured systems in double patterning", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391X (30 March 2010); https://doi.org/10.1117/12.846602

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