Paper
26 May 2010 Defect inspection and repair performance comparisons between EUV and conventional masks
Kazunori Seki, Masafumi Shibita, Takashi Yoshii, Tsukasa Fujimoto, Yo Sakata, Shinji Akima
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Abstract
Two types of blanks, EUV A and EUV B, are the leading EUV blanks contenders. They are evaluated and compared with OMOG blank for their suitability as a photomask blanks. For defect inspection evaluation, contrast for pattern image and sensitivity for detection were evaluated using the newly developed inspection tools. With these tools, it is learnt that the sensitivity varies according to a set of conditions. For repair performance evaluations, EUV mask was assessed through E-beam repair tools, those that are most widely used. The results on both types of masks demonstrate good repair shape that is almost same quality as repair on OMOG mask. Moreover, under the two types of repair conditions used in this study, no degradation on pattern was found for the optimized condition as result of repair work.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Seki, Masafumi Shibita, Takashi Yoshii, Tsukasa Fujimoto, Yo Sakata, and Shinji Akima "Defect inspection and repair performance comparisons between EUV and conventional masks", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774807 (26 May 2010); https://doi.org/10.1117/12.867754
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Cited by 1 scholarly publication.
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KEYWORDS
Extreme ultraviolet

Photomasks

Inspection

Deep ultraviolet

Defect inspection

Scanning electron microscopy

Semiconducting wafers

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