Growth Of Atomic Layer Structures By Modified MOCVD And Their Characterization

Y. Horikoshi; N. Kobayashi; T. Toriyama

doi:10.1117/12.940907

22 April 1987 Growth Of Atomic Layer Structures By Modified MOCVD And Their Characterization

Y. Horikoshi, N. Kobayashi, T. Toriyama

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940907
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

When Ga or Al atoms are supplied on a clean GaAs surface under As-free or low As pressure atomosphere, they are quite mobile and migrate very rapidly on the growing surface. This characteristic was utilized for growing atomically-flat GaAs-AlGaAs heter-interfaces, and for lowering the growth temperature. The method is based on metal-organic chemical vaper deposition and employs alternate supply of gaseous sources. (AlAs)n(GaAs) superlattices and AlGaAs-GaAs single quantum wells were grown using this method, and characterized with X-ray diffraction, photoluminescence, and Raman scattering measurement. These measurements revealed improved flatness of AlGaAs-GaAs heterojunction interfaces grown by this method.

Citation Download Citation

Y. Horikoshi, N. Kobayashi, and T. Toriyama "Growth Of Atomic Layer Structures By Modified MOCVD And Their Characterization", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940907

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