Spintronics using Si

Hanan Dery; Pengke Li

doi:10.1117/12.872881

17 January 2011 Spintronics using Si

Hanan Dery, Pengke Li

Proceedings Volume 7943, Silicon Photonics VI; 794313 (2011) https://doi.org/10.1117/12.872881
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The spin polarization of carriers in a direct-gap semiconductor is readily quantified by measuring the circular polarization of the recombination light luminescence. However, in silicon, owing to its indirect band-gap, such a direct connection between spin polarization and luminescence has been conspicuously absent. This missing link is established with a theory that provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. The theory is applied to explain recent experiments on spin injection in silicon and further elucidate its desirable spin-dependent properties.

Citation Download Citation

Hanan Dery and Pengke Li "Spintronics using Si", Proc. SPIE 7943, Silicon Photonics VI, 794313 (17 January 2011); https://doi.org/10.1117/12.872881

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