Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

Marie Krysak; Markos Trikeriotis; Evan Schwartz; Neal Lafferty; Peng Xie; Bruce Smith; Paul Zimmerman; Warren Montgomery; Emmanuel Giannelis; Christopher K. Ober

doi:10.1117/12.879385

15 April 2011 Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

Marie Krysak, Markos Trikeriotis, Evan Schwartz, Neal Lafferty, Peng Xie, Bruce Smith, Paul Zimmerman, Warren Montgomery, Emmanuel Giannelis, Christopher K. Ober

Author Affiliations +

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79721C (2011) https://doi.org/10.1117/12.879385
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

We have developed a transparent, high refractive index inorganic photoresist with significantly higher etch resistance than even the most robust polymeric resist. As feature sizes continue to decrease, film thickness must be reduced in order to prevent pattern collapse. Normally thinner films prevent sufficient pattern transfer during the etch process, creating the need for a hardmask, thus increasing production cost. Compared to PHOST, we have shown over 10 times better etch resistance. Organic photo-crosslinkable ligands have been attached to a hafnium oxide nanoparticle core to create an imageable photoresist. This resist has shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns. In addition to improved etch resistance, the inorganic photoresist exhibits a high refractive index, increasing the depth of focus (DOF). The nanoparticle size of ~ 1-2 nm has the potential to reduce line edge roughness (LER).

Citation Download Citation

Marie Krysak, Markos Trikeriotis, Evan Schwartz, Neal Lafferty, Peng Xie, Bruce Smith, Paul Zimmerman, Warren Montgomery, Emmanuel Giannelis, and Christopher K. Ober "Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721C (15 April 2011); https://doi.org/10.1117/12.879385

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