Optical properties of crystalline and amorphous Si:P for device fabrication and structural modeling

M. Basta; Z. T. Kuznicki; A. Sieradzki

doi:10.1117/12.889255

29 April 2011 Optical properties of crystalline and amorphous Si:P for device fabrication and structural modeling

M. Basta, Z. T. Kuznicki, A. Sieradzki

Proceedings Volume 8065, SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future; 80650I (2011) https://doi.org/10.1117/12.889255
Event: SPIE Eco-Photonics, 2011, Strasbourg, France

Abstract

Analytic representation of optical function is necessary for the device and structural modeling. Nowadays optoelectronic devices consist of complex materials combined together, therefore accurate representation of each part is even more important and results in prediction of overall structure properties. The complete model for amorphous and crystalline Si:P dielectric function is presented. Range of accuracy, known problems and model parameters are studied and described. New interesting features of Si:P dielectric functions are discussed. The influence of dopants and free-carriers is taken into account and studied separately and their overlap is also analyzed. The influence of Drude damping time on the optical response of heavily doped Si:P is studied. All results are then compared with experimental data.

Citation Download Citation

M. Basta, Z. T. Kuznicki, and A. Sieradzki "Optical properties of crystalline and amorphous Si:P for device fabrication and structural modeling", Proc. SPIE 8065, SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future, 80650I (29 April 2011); https://doi.org/10.1117/12.889255

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