Temperature dependence of electron transport in GaN/AlGaN quantum cascade detectors

Sergii V. Gryshchenko; Mykhaiol V. Klymenko; Vladimir V. Lysak; Olexiy V. Shulika; Igor A. Sukhoivanov

doi:10.1117/12.895440

16 September 2011 Temperature dependence of electron transport in GaN/AlGaN quantum cascade detectors

Sergii V. Gryshchenko, Mykhaiol V. Klymenko, Vladimir V. Lysak, Olexiy V. Shulika, Igor A. Sukhoivanov

Proceedings Volume 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II; 81550O (2011) https://doi.org/10.1117/12.895440
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

In this work we investigate the influence of extractor design and temperature on transport properties of quantum cascade detector. For this purpose we realize numerical calculation of electron lifetimes considering electronphonon and electron impurities scattering. Electron-phonon interactions are treated using Fermi Golden Rule which allows to calculate lifetime of carriers with temperature and structure design taking into account. Transport characteristics of the quantum cascade detectors have been computed using density matrix theory. As a result, we have obtained the system of ordinary differential equations describing dynamics of electron distribution functions and intersubband correlations. Managing carrier lifetime in quantum wells gives us possibility to control quantum efficiency and response.

Citation Download Citation

Sergii V. Gryshchenko, Mykhaiol V. Klymenko, Vladimir V. Lysak, Olexiy V. Shulika, and Igor A. Sukhoivanov "Temperature dependence of electron transport in GaN/AlGaN quantum cascade detectors", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81550O (16 September 2011); https://doi.org/10.1117/12.895440

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