Semiconductor investigation by terahertz radiation pulses

Arūnas Krotkus; A. Arlauskas; R. Adomavičius

doi:10.1117/12.929130

15 October 2012 Semiconductor investigation by terahertz radiation pulses

Arūnas Krotkus, A. Arlauskas, R. Adomavičius

Proceedings Volume 8496, Terahertz Emitters, Receivers, and Applications III; 84960V (2012) https://doi.org/10.1117/12.929130
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

Several applications of terahertz radiation pulses for characterizing semiconductor bulk materials and structures are described. Terahertz pulses emitted at the surfaces illuminated by femtosecond laser of a tunable wavelength are demonstrated to provide information on the electron energy spectrum in the conduction band as well as on the subsurface band bending. On the other hand, by sampling the conductivity of various structures with short electrical field transient photoexcited electron dynamics can be directly studied at its initial, subpicosecond time scale. Narrow gap semiconductors InSb and InAs as well as novel materials such as GaAsBi or self-assembled InAs quantum dots were characterized by using terahertz radiation pulses.

Citation Download Citation

Arūnas Krotkus, A. Arlauskas, and R. Adomavičius "Semiconductor investigation by terahertz radiation pulses", Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960V (15 October 2012); https://doi.org/10.1117/12.929130

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