Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range

P. Christol; R. Taalat; C. Maingue-Wilson; C. Cervera; H. Aït-Kaci; J. B. Rodriguez; I. Ribet-Mohamed

doi:10.1117/12.905976

20 January 2012 Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range

P. Christol, R. Taalat, C. Maingue-Wilson, C. Cervera, H. Aït-Kaci, J. B. Rodriguez, I. Ribet-Mohamed

Author Affiliations +

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82680T (2012) https://doi.org/10.1117/12.905976
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

InAs/GaSb superlattice pin photodiodes showing asymmetrical period design were fabricated by MBE on ptype GaSb substrate. These SL structures exhibited cut-off wavelength in the midwave infrared domain (MWIR) at 5μm at 80K. Electrical characterizations including dark current and capacitance-voltage measurements were performed on single detectors in the temperature range [77K-300K]. The SL photodiode measurements revealed carrier concentrations of about 6x10¹⁴ cm^-3 at 77K, dark current densities J= 4x10^-8 A/cm² at 77K, J = 0.19A/cm² at 200K and J = 10A/cm² at 300K for Vbias =-50mV. The measured R₀A product is higher than 1.5x106Ω.cm² at 77K and equal to 1x10^-2Ω.cm² at T=300K, for cut-off device equal to 5μm and 6.05μm, respectively. These results are compared with the ones obtained by symmetrical SL structure and show that the differential resistance area product is improved by more than one order of magnitude. These results obtained help us to define the optimized SL pin structure design suitable for high temperature operation in the MWIR domain.

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P. Christol, R. Taalat, C. Maingue-Wilson, C. Cervera, H. Aït-Kaci, J. B. Rodriguez, and I. Ribet-Mohamed "Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680T (20 January 2012); https://doi.org/10.1117/12.905976

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