50X, 75X mask cleaning effects on EUV lithography process and lifetime: lines and spaces, contacts, and LER

Brittany M. McClinton; Robert J. Chen; Simi A. George; Yongbae Kim; Lorie-Mae Baclea-an; Patrick P. Naulleau

doi:10.1117/12.918236

23 March 2012 50X, 75X mask cleaning effects on EUV lithography process and lifetime: lines and spaces, contacts, and LER

Brittany M. McClinton, Robert J. Chen, Simi A. George, Yongbae Kim, Lorie-Mae Baclea-an, Patrick P. Naulleau

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83223C (2012) https://doi.org/10.1117/12.918236
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

In this study we examine the effects on lithographic performance due to repetitive cleans on a mask patterned for use in extreme ultraviolet lithography (EUVL). Exposures were carried out at the SEMATECH Berkeley micro-exposure tool (MET) on both a cleaned mask and a reference (uncleaned) mask with the same mask architectures. The performance is measured against the process window for lines and spaces, line edge roughness (LER), and contact size variation measured using scanning electron microscopy (SEM). Mask properties such as surface roughness were used as metrics of the cleaning process effects. We also introduce a new method involving the correlation in LER of a single line from exposure to exposure at the same dose and focus. If mask cleaning were to introduce significant damage to either the capping layer or the absorber, we might expect an increase in LER correlation from exposure to exposure of the same feature, as uncorrelated effects due to the resist cause a second order change depending on aerial image contrast loss. We look at these metrics on the same mask used in previous cleans studies, now for a 50X and 75X cleans.

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Brittany M. McClinton, Robert J. Chen, Simi A. George, Yongbae Kim, Lorie-Mae Baclea-an, and Patrick P. Naulleau "50X, 75X mask cleaning effects on EUV lithography process and lifetime: lines and spaces, contacts, and LER", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83223C (23 March 2012); https://doi.org/10.1117/12.918236

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KEYWORDS

Photomasks

Line edge roughness

Extreme ultraviolet lithography

Mask cleaning

Reflectivity

Critical dimension metrology

Surface roughness

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