Nanocrystalline GaAs thin films by pulsed laser deposition

F. R. Chowdhury; M. Gupta; Y. Y. Tsui

doi:10.1117/12.2001471

24 October 2012 Nanocrystalline GaAs thin films by pulsed laser deposition

F. R. Chowdhury, M. Gupta, Y. Y. Tsui

Proceedings Volume 8412, Photonics North 2012; 84121U (2012) https://doi.org/10.1117/12.2001471
Event: Photonics North 2012, 2012, Montréal, Canada

Abstract

In this study, we investigated the effect of substrate temperature on the change in structural and morphological properties of thin film Gallium Arsenide (GaAs) deposited by pulsed laser deposition (PLD) on Silicon (Si) substrate. The growths were conducted at different substrate temperatures (25º C - 600º C). X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were used to study the crystal structure and surface quality of the films. It was observed that the films were increasingly more crystalline in the (111) orientation and also larger in crystal grain size with increase in substrate temperature 285º C and above. The deposited GaAs films on Si were smooth, dense and free of voids, pinholes and cracks for a wide range of temperature.

Citation Download Citation

F. R. Chowdhury, M. Gupta, and Y. Y. Tsui "Nanocrystalline GaAs thin films by pulsed laser deposition", Proc. SPIE 8412, Photonics North 2012, 84121U (24 October 2012); https://doi.org/10.1117/12.2001471

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