Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures

Susanne Weidenfeld; Hendrik Niederbracht; Marcus Eichfelder; Michael Jetter; Peter Michler

doi:10.1117/12.922278

10 May 2012 Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures

Susanne Weidenfeld, Hendrik Niederbracht, Marcus Eichfelder, Michael Jetter, Peter Michler

Author Affiliations +

Proceedings Volume 8432, Semiconductor Lasers and Laser Dynamics V; 843205 (2012) https://doi.org/10.1117/12.922278
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

In the current work, we show a detailed analysis of the transverse beam profile and polarization characteristics of devices with one and three oxide apertures. A Gaussian transverse beam profile is achieved with an oxide aperture diameter of less than 6 μm. The laser light is linearly polarized with a high degree of polarization (> 97 %) in the complete current range. The stable polarization direction can be attributed to ordering effects ocurring during epitaxial growth of the GaInP material system and a reduction in crystal symmetry. Different oxide aperture diameters can be implemented in one device due to high oxidation selectivity of the Al_xGa_1-xAs layer depending on aluminum content. These deep oxidation layers lead to a reduction of the parasitic capacitance, while beam profile and polarization characteristics are not affected.

Citation Download Citation

Susanne Weidenfeld, Hendrik Niederbracht, Marcus Eichfelder, Michael Jetter, and Peter Michler "Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843205 (10 May 2012); https://doi.org/10.1117/12.922278

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