Efficient simulation of EUV multilayer defects with rigorous data base approach

Peter Evanschitzky; Feng Shao; Andreas Erdmann

doi:10.1117/12.964282

8 November 2012 Efficient simulation of EUV multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 8522, Photomask Technology 2012; 85221S (2012) https://doi.org/10.1117/12.964282
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.

Citation Download Citation

Peter Evanschitzky, Feng Shao, and Andreas Erdmann "Efficient simulation of EUV multilayer defects with rigorous data base approach", Proc. SPIE 8522, Photomask Technology 2012, 85221S (8 November 2012); https://doi.org/10.1117/12.964282

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