CMOS sensor for RSI applications

Weng Lyang Wang; Shengmin Lin

doi:10.1117/12.977606

9 November 2012 CMOS sensor for RSI applications

Weng Lyang Wang, Shengmin Lin

Proceedings Volume 8528, Earth Observing Missions and Sensors: Development, Implementation, and Characterization II; 852804 (2012) https://doi.org/10.1117/12.977606
Event: SPIE Asia-Pacific Remote Sensing, 2012, Kyoto, Japan

Abstract

Three CMOS sensors were developed for remote sensing instrument (RSI) applications. First device is linear CMOS Sensor for Terrain Mapping Camera (TMC). This device has 4000 elements, 7 μm x 7 μm of pixel size. Second device is area CMOS Sensor for Hyper Spectral Imager (HySI). The device has 512 x 256 elements and 50 μm x 50 μm of pixel size. Third device is multi band sensor for Remote Sensing Instrument (RSI). This device integrates five linear CMOS sensor into a single monolithic chip to form a Multiple System On Chip (MSOC) IC. The multi band sensor consists of one panchromatic (PAN) and four multi - spectral (MS) bands. The PAN is 12000 elements, 10 μm x 10 μm with integration time of 297 μs ± 5%. Each MS band is 6000 elements, 20 μm x 20 μm with integration time of 594 us μs ± 5%. Both linear and area CMOS sensor were designed and developed for Chandrayaan-1 project. The Chandrayaan-1 satellite was launched to the moon on October 22, 2008. The moon orbit height is 100 km and 20 km of swath size. The multi band sensor was designed for earth orbit. The earth orbit height is about 720 km and 24 km of swath. The low weight, low power consumption and high radiation tolerance camera requirement only can be done by CMOS Sensor technology. The detail device structure and performance of three CMOS sensors will present.

Citation Download Citation

Weng Lyang Wang and Shengmin Lin "CMOS sensor for RSI applications", Proc. SPIE 8528, Earth Observing Missions and Sensors: Development, Implementation, and Characterization II, 852804 (9 November 2012); https://doi.org/10.1117/12.977606

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