Application specific ratings for lithography process filters

Toru Umeda; Shuichi Tsuzuki

doi:10.1117/12.2010735

29 March 2013 Application specific ratings for lithography process filters

Toru Umeda, Shuichi Tsuzuki

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868208 (2013) https://doi.org/10.1117/12.2010735
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The typical performance index of microelectronics-grade filter products is based upon mechanical sieving. However, adsorption also plays a critical role for reducing certain defects. To provide a more accurate metric, a complementary adsorption performance index is introduced for lithography process filters. In this study, heptylamine-substituted palladium nanoparticles were used to simulate the adsorptive characteristics of microbridge defect precursors. Adsorption kinetic parameters were calculated for Nylon 6,6 and HDPE filters that were challenged with the simulation particles. Nylon 6,6 media quantitatively demonstrated superior adsorptive retention characteristics. The new index is expected to guide both filter product development and filter recommendation for next generation lithography processes.

Citation Download Citation

Toru Umeda and Shuichi Tsuzuki "Application specific ratings for lithography process filters", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868208 (29 March 2013); https://doi.org/10.1117/12.2010735

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