Characterization of thin Gd2O3 magnetron sputtered layers

Jacek Gryglewicz; Piotr Firek; Jakub Jaśiński; Robert Mroczyński; Jan Szmidt

doi:10.1117/12.2031230

25 July 2013 Characterization of thin Gd₂O₃ magnetron sputtered layers

Jacek Gryglewicz, Piotr Firek, Jakub Jaśiński, Robert Mroczyński, Jan Szmidt

Proceedings Volume 8902, Electron Technology Conference 2013; 89022M (2013) https://doi.org/10.1117/12.2031230
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

Reactive magnetron sputtering technique using O₂/Ar gas mixture was used to deposit Gd₂O₃ layers. Following metallization process of Al allowed to create MIS structures, which electrical parameters (κ, D_it, U_FB, ρ, etc.) were measured using high frequency C-V equipment. Created layers exhibit high permittivity (κ≈12) at 100kHz. I-V measurements point out on maximum electric break down field E_br≈0.4 MV/cm and maximum break down voltage U_br ≈ 16V. Layers were morphologically tested using AFM technique (R_a ≈ 0.5÷2nm). Layer thicknesses as well as refractive indexes (RI ≈ 1.50÷2.05) were estimated using ellipsometry measurements.

Citation Download Citation

Jacek Gryglewicz, Piotr Firek, Jakub Jaśiński, Robert Mroczyński, and Jan Szmidt "Characterization of thin Gd₂O₃ magnetron sputtered layers", Proc. SPIE 8902, Electron Technology Conference 2013, 89022M (25 July 2013); https://doi.org/10.1117/12.2031230

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